Resistive memory accelerator

ABSTRACT

Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

This invention was made with Government support under Contract#CCF1054179 and CCF1217418 awarded by the National Science Foundation.The Government has certain rights in the invention.

BACKGROUND

Computer memory, or often memory, refers to the devices used to storeinformation for use in a computer or other electronic device. Memory isused for storage systems, which function at high-speed, which isdifferent from secondary memory, which provides program, and datastorage that is slow to access but offers higher storage capacity.

In mathematics, linear equations or a system of linear equations is acollection of linear equations involving the same set of variables. Thetheory of linear systems is the basis and a fundamental part of linearalgebra, a subject which is used in most parts of modern mathematics.Computational algorithms for finding the solutions are an important partof numerical linear algebra, and play a prominent role in engineering,physics, chemistry, computer science, and economics.

SUMMARY

A first aspect of the present disclosure provides a method for solving.The method includes receiving, by a resistive memory array, a firstdata, the resistive memory array comprising a plurality of cells,wherein the receiving comprises setting a plurality of resistances onthe plurality of cells, wherein each of the plurality of resistances arebased on the first data. The method further includes receiving, by theresistive memory array, a second data, wherein the receiving comprisesapplying at least one of a current and a voltage based on the seconddata on the plurality of cells. The method further includes determining,by the resistive memory array, an initial unknown value, the initialvalue based on the first data and the second data.

A second aspect of the present disclosure provides an apparatus forsolving. The apparatus includes at least one processor, at least onememory operably connected to the at least one processor, and at leastone resistive memory array, the resistive memory array comprising aplurality of crosspoint cells, the at least one resistive memory arrayprogrammable with at least a first data and a second data, wherein theprogrammable at least one resistive memory comprises setting a pluralityof resistances on the plurality of crosspoint cells based on the firstdata and applying at least one of a current and a voltage based on thesecond data. The apparatus further includes at least one sensor, the atleast one sensor being operatively coupled to the at least one resistivememory array able to sense at least one of a voltage and a current onthe plurality of crosspoint cells.

A third aspect of the present disclosure provides an apparatus forsolving. The apparatus includes at least one processor, at least onememory operably connected to the at least one processor, and at leastone resistive memory array, the resistive memory array comprising aplurality of crosspoint cells, wherein the at least one processor, theat least one memory including computer program instructions, and the atleast one resistive memory array are configured to cause the apparatusto at least set a first data on the at least one resistive memory array,wherein the setting comprises setting a plurality of resistances on theplurality of crosspoint cells, wherein each of the plurality ofresistances are based on the first data. The apparatus is furtherconfigured to set a second data on the at least one resistive memoryarray, wherein the setting comprises applying at least one of a currentand a voltage on the plurality of crosspoint cells. The apparatus isstill further configured to determine an initial unknown value, theinitial value based on the first data and the second data.

The following will describe aspects of the present disclosure, but itshould be appreciated that the present disclosure is not limited to thedescribed aspects and various modifications are possible withoutdeparting from the basic principles.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S)

FIG. 1 presents a comparison of resistive memory technologies.

FIG. 2a presents a resistive memory array organization suitable for usein practicing aspects of this disclosure.

FIG. 2b presents an alternative resistive memory array organizationsuitable for use in practicing aspects of this disclosure.

FIG. 3 presents resistance switching in a metal-oxide memristor.

FIG. 4 presents a magnetic tunnel junction structure.

FIG. 5 presents a graph of voltage versus time for phase change memory.

FIG. 6 presents a cross-point array suitable for practicing aspects ofthis disclosure.

FIG. 7 presents a linear system solver based on resistive cross-pointarray suitable for practicing aspects of this disclosure.

FIG. 8 presents a logic flow diagram in accordance with a method andapparatus for performing aspects of this disclosure.

DETAILED DESCRIPTION

Resistive memories have potential as static random-access memory (SRAM)and dynamic random-access memory (DRAM) replacements because resistivememories represent information using resistance rather than electricalcharge, and thus hold the potential to scale to much smaller geometriesthan charge based memories. Since resistive memory retains state withoutcharge, resistive memories do not need to be refreshed periodically likeDRAM or connected to a constant supply voltage like SRAM. Resistivememories also dissipate near-zero leakage power at stand-by. RRAM,spin-torque transfer magneto resistive RAM (STT-MRAM), and phase changememory (PCM) all rely on resistance to represent data, but the physicalmechanisms of switching resistances are different.

FIG. 1 presents a comparison between cell size, resistance ratio,switching latency, switching energy, and endurance of RRAM, STT-MRAM,and PCM. As is evident, from FIG. 1, each has long switching latency andhigh switching energy within the cells compared to SRAM and DRAM. RRAMand PCM typically have a limited write endurance. This prevents RRAM andPCM from being used in frequently written structures, such as L1 datacache. However, the high R_(High)/R_(Low) ratio as shown in FIG. 1,enables RRAM and PCM to act as a multi-level cell (MLC). In other words,RRAM and PCM are able to store multiple bits in one storage cell, whichincreases their data density. Another way to improve data density is byeliminating access transistors.

Referring to FIG. 2a , shown is an organization of an array 202 thatincludes nine (9) one-transistor one-resistor (1T1R) cells 204. Asdepicted, each 1T1R 204 includes a single resistor 206 and a singletransistor 208. A resistor 206 includes any passive two-terminalelectrical component that implements electrical resistance as a circuitelement. Resistors 206 are able to limit current flow. Resistor 206includes any type of resistor known in the art that is able to limitcurrent flow operable in an electronic circuit.

Transistor 208 includes semiconductor devices that can amplify andswitch electronic signals and electrical power. Transistor 208 can becomposed of semiconductor material and able to connect to an externalcircuit, such as resistor 206. Transistor 208 can be configured to havea voltage or current applied to transistor 208 and the ability to changethe current. Transistor 208 includes any type of transistor known in theart that is able to operate in an electronic circuit.

In practice, when a particular 1T1R cell 204 is accessed each of thecorresponding wordlines and read/write through bitlines are alsoactivated. A wordline refers to the rows of array 202 shown for examplein FIG. 2a . A bitline refers to the columns of array 202 shown forexample in FIG. 2a . In other words, when a particular 1T1R cell 204 isaccessed or activated, the 1T1R cells 204 located in the same row andcolumn are also activated or accessed. However, in some aspects, when aparticular 1T1R cell 204 is accessed or activated, the 1T1R cells 204located in the same row are activated or accessed and the 1T1R cells 204in the same column are not activated or accessed. Conversely, in anotheraspect, when a particular 1T1R cell 204 is accessed or activated, the1T1R cells 204 located in the same row are not activated or accessed andthe 1T1R cells 204 in the same column are activated or accessed.

FIG. 2b illustrates an alternative array organization. Shown in FIG. 2bis cross-point array 210, which includes nine (9) resistive memory cells212 with resistors 214. As illustrated in FIG. 2b , each resistivememory cell 212 contains only a single resistor 214. Each resistivememory cell 212 is connected directly to the cross-point array's 210wordlines and bitlines without an access transistor as is the case inFIG. 2a . In other words, each resistive memory cell 212 is connected tothe other resistive memory cells 212 in cross-point array 210 withoutthe use of a transistor. Though cross-point array 210 has a higherdensity than array 202, cross-point array 210 may suffer from sneakcurrent due to the lack of isolations of the resistive memory cells 212.However, issues with sneak current can be alleviated by using resistivememories with high RHigh/RLow ratio or stacking memory cells with adiode.

In one aspect, Memristor includes a metal-oxide insulator between twometals forming an MIM stack. Memristors have the ability to alter orchange resistances by building filaments within their metal-oxideinsulator, which create conductive paths in the MIM stack between thetwo metals. Two types of memristors include conductive-bridging RAM(CBRAM), and the metal-oxide memristor (MeOx-RRAM).

A CBRAM cell operates through the diffusion of an electrochemicallyactive metal electrode such as silver (Ag) or copper (Cu) ions. Theelectrochemically active ions can create conductive bridges in the MIMstack between the two metals when a voltage is applied to the MIM stack.Conversely, a MeOx-RRAM cell operates by building conductive filamentsbased on oxygen vacancies by evacuating oxygen ions from the insulatorbetween the two metal electrodes.

Referring to FIG. 3, depicted is one aspect of a resistance changingprocess of a metal-oxide memristor. When a set voltage is applied acrossthe electrode 304 and electrode 306 shown in diagram 302, the negativelycharged oxygen ions 308 are “knocked-out” from the lattice of electrode306 and move towards the positively charged anode (electrode 304). Theplus sign above electrode 304 and the negative sign below electrode 306indicates the polarity of an applied voltage. Electrode 304 as depictedin FIG. 3 is tellurium shown as side A and electrode 306 is berylliumshown as side B. However, it should be appreciated that electrode 304and electrode 306 can be any material that allow for negatively chargedions to move in accordance with the aspects described herein when avoltage is applied to a system similar to that shown in FIG. 3.

As shown in diagram 310, not all of the oxygen ions 308 move intoelectrode 304, but some of the oxygen ions 308 remain between electrode304 and electrode 306. The remaining oxygen ions 308 form conductivefilaments between electrodes 304 and 306, which results in a lowresistance state. To increase cell resistance, cell resistance, a resetvoltage can be applied to the electrodes 304 and 306 to move oxygen ions308 back to the insulator electrode 306. This in turn will disconnectthe conductive filament of oxygen ions 308 from electrode 304. Thepolarity of the reset voltage is opposite to the set voltage for abipolar memristor, as shown in diagram 312. The negative sign aboveelectrode 304 and the plus sign below electrode 306 in diagram 312indicate the polarity of the reset voltage. However, for a unipolarmemristor the reset voltage will be of the same polarity as the setvoltage. Diagram 314 depicts a cell at a high resistance state, in whichthe oxygen vacancies do not form a path to connect electrode 304 andelectrode 306. The height and width of the conductive filaments 316affect and determine the cell resistance, which enables memristors torepresent values over a continuous range.

Magnetoresistive memory operates by relying on a large resistancecontrast provided with magnetic tunnel junctions (MTJs). An exemplaryMTJ 402 is shown in FIG. 4, which is composed of two ferromagnetic (FM)layers, a hard layer 404 and a free layer 406. The two FM layers 404 and406 are separated with a tunneling barrier 408. The magnetization of FMlayer 404, referred to as the fixed or hard layer, is pinned or fixed byvirtue of being thicker or exchange coupled to an antiferromagneticlayer. The magnetization of FM layer 406, referred to as the free layer,is free and can be aligned either parallel (P) or antiparallel (AP) tothe magnetization of the fixed layer 404. In practice, electrons areable to tunnel through the thin tunneling barrier 408 as long as a biasvoltage is applied across MTJ 402. The P state exhibits low electricalresistance. The AP state exhibits high electrical resistance, which iscommonly 2 to 8 orders of magnitude higher than the P state. Themagnetic state of an MTJ can be used to represent a bit of information.

The magnetic state of MTJ 402 can be controlled magnetically through aremote current pulse or electrically through a direct current pulse. Theability to control the magnetic state of MTJ 402 allows MTJ 402 tooperate in high performance applications that require low powerconsumption. The magnetic state of MTJ 402 can also be electricallycontrolled through the spin transfer torque (STT) effect. The STT effectoccurs when the orientation of a magnetic layer of for example, FMlayers 404 or 406 of MTJ 402 is modified using a spin-polarized current.In other words, by passing a current through MTJ 402 having moreelectrons being either spin-up or spin-down.

The STT effect controls the magnetic state of MTJ 402 using currentpulses that transport spin angular momentum to MTJ 402. For a specificduration of the current pulse, operation of the STT effect is maintainedprovided that the amplitude of the current pulse is larger than acurrent threshold. Since the current threshold of MTJ 402 growssignificantly as the duration of the current pulses decreases, theperformance of fast operations of MTJ 402 through the use of the STTeffect can affect the power efficiency of MTJ 402.

Phase change memory (PCM) technology is a non-volatile random-accessmemory that typically includes an amorphous state and a crystallinestate. A PCM in operation relies on a large resistance contrast betweenthe amorphous and the crystalline states in its phase change materials.The amorphous phase tends to have high electrical resistivity. Thecrystalline phase exhibits a low resistivity, which in some instances is3 or 4 orders of magnitude lower than the amorphous state. Due to thislarge resistance contrast, the change in read current is quite large,which allows a PCM to provide for the multiple analog levels needed formultilevel cell (MLC) operations.

To set a PCM cell into the low-resistance state, typically an electricalpulse can be applied which heats a significant portion of the PCM cellabove the crystallization temperature of its phase change material. Therequired duration of the pulse depends on the crystallization speed ofthe phase change material. The duration of the pulse determines thewrite speed of the PCM, which can require pulses shorter than 10 ns insome instances.

Referring to FIG. 5, shown is graph 502, which depicts how voltage overtime affects a PCM. Programming a PCM device involves application ofelectrical power on the PCM through an applied voltage, which leads tointernal temperature changes in the PCM. This results in quick heatingand quenching of the phase change material, making it amorphous, orholding it in its crystallization temperature range for some time,thereby switching it to a crystalline state. The dotted line T_(melt)indicates the temperature at which the phase change material melts, anddotted line T_(cryst) indicates the temperature at which the phasechange material crystalizes. A low voltage is typically used to sensethe device resistance, so that the device state is not perturbed asillustrated by curve 508.

To reset the cell into the high-resistance state, a larger electricalcurrent is applied in order to melt the central portion of the cell asdepicted by curve 504. If this pulse is stopped abruptly enough, themolten material quenches into the amorphous phase, producing a cell inthe high-resistance state. The reset operation, as shown by curve 506,requires a relatively large amount of current and power. This requiresan access device capable of delivering high current and power withoutitself requiring a significantly larger footprint than the PCM elementitself. As is evident from FIG. 5, the duration that a voltage isapplied for the reset pulse in curve 504 is significantly less than theduration of the set pulse in curve 506. The read operation is performedby measuring the device resistance at low voltage, so that the devicestate is not perturbed.

Computer models of physical systems are a vital part of modernscientific and engineering research. Large scale models of the Earth'sweather, climate, and geologic activity, biological cell structures, themotion and interactions of structures in the universe, fluid dynamics,electronic circuits, and even economic systems all require an immenseamount of computing resources to run. These simulations run on tens ofthousands of processors, non-stop, several months at a time beforereaching completion. Complex models can be described in the form ofsystems of continuous partial differential equations.

The most common way of solving such systems is to discretize them. Inother words, transform the systems into discrete difference equations.These difference equations serve as an approximation for the originalsystem. Discretization can be accomplished using finite difference,finite element, and finite volume methods. The resulting differenceequations can be written as a sparse linear system in the general formAx=b, wherein A can be an m x n matrix, with columns a₁, a₂, . . . ,a_(n), and x can be in R^(n), wherein R^(n) is a vector of n realnumbers, then the product of A and x denoted Ax is the linearcombination of the columns of A using the corresponding entries in x.Here, sparse refers to the fact that the elements of the coefficientmatrix A are predominantly zero.

Direct methods for solving linear systems include Gaussian elimination,which seek to arrive at the exact solution through a finite number ofoperations. Iterative methods for solving linear systems begin byguessing the solution and then proceed to improve upon that guess in asequence of steps. Each successive step generates an approximation thatis closer to the solution than the previous one. Unlike direct methods,iterative methods do not arrive at the exact solution, but they producean answer that is close to the exact solution. Aspects of thisdisclosure provide a means to enable iterative methods of solvingproblems.

Stationary and Krylov subspace methods are the two main classes ofiterative methods for solving linear systems. Stationary methods includethe Jacobi, the Gauss-Seidel, and the successive over-relaxation (SOR)methods. These methods involve starting with an initial guess as to thesolution of a linear system and then recursively improving the guess byreducing the error between the current estimate and the solution.Reducing the error includes removing one of its vector components foreach iteration. The Jacobi method is based on solving for every variablelocally with respect to the other variables. One iteration correspondsto solving for every variable once. The Jacobi method is typicallyslower to converge than the other stationary methods.

The Gauss-Seidel method is similar to the Jacobi method except that ituses updated values as soon as they are available. The SOR method can bederived from the Gauss-Seidel method by introducing an extrapolationparameter. The accuracy of the solution from each of the methods can beadjusted by modifying the convergence tolerance to the desired value.The Jacobi, Gauss-Seidel, and SOR methods differ from each other in theway they split up the coefficient matrix. All of them are characterizedby the general recursive equation x_((k+1))=Gx_((k))+f, whereinG=I−M^(I)A, f=M^(I)b and k is the iteration count. In the equation forthe iteration matrix G, I is the identity matrix, M is thepreconditioning matrix and A is the coefficient matrix of the linearsystem to be solved. In the equation for f, b is the right-hand sidevector of the linear system to be solved. An identity matrix is an n x nmatrix with ones on the main diagonal and zeros elsewhere. These methodsrely on decomposing matrix A into its diagonal, strict upper triangular,and strict lower triangular matrices. Stationary methods converge onlyfor a limited class of matrices. If the spectral radius of matrix G isless than 1, then the recursive equation will converge to the solution.The spectral radius associated with the iteration matrix determines thespeed of convergence.

Methods based on Krylov subspaces include conjugate gradient (CG),generalized minimal residual method (GMRES), biconjugate gradient (BiCG)and the like. These methods involve creating a basis made up of thesequence of successive powers of the matrix multiplied by the initialresidual. This is known as a Krylov sequence. Iterative approximationsare then performed by minimizing the residual over the Krylov sequencebasis. These methods usually converge in n iterations, where n is thesize of the linear system, unless there are rounding errors. CG isusually expected to converge in many fewer iterations than n.

There is also a separate set of iterative algorithms that can also beused as preconditioners, which are collectively referred to as multigrid(MG). MG is effective because the number of iterations it takes toconverge does not vary with the size of the linear system. For MG, thespeed of convergence can be increased by moving back and forth between afine and a coarse mesh grid granularity. Stationary methods cangenerally quickly remove the error vector components that point in thedirections of the eigenvectors of the iteration matrix that areassociated with the largest eigenvalues (high frequency modes).Annihilating the other components (low frequency modes) is a morechallenging task for stationary methods. However, these low frequencymodes easily map to high frequency modes on a coarser grid. Thus, MGstarts with a few stationary iterations on a fine grid, which removeshigh frequency components, and then proceeds to coarsen the mesh so thatthe remaining error components can be rapidly removed. The MG procedurecan be optimized by adjusting the number of coarseness levels and thenumber of times it cycles from fine to coarse and then back to finegranularity. Changing the mesh between different granularities isaccomplished using special interpolation and restriction matrices.

In math, preconditioning generally refers to applying a preconditionertransformation that adjusts a particular problem such that it becomeseasier to solve numerically. In the specific case of linear iterativesolvers, preconditioning refers to a procedure where matrix A in thevector equation Ax=b is multiplied by the inverse of a preconditionermatrix P such that the resulting product has a lower condition numberthan A. The lower the condition number, the higher the rate ofconvergence. Preconditioning the coefficient matrix before applyingiterative methods greatly reduces the time to convergence.

Conventional few-core microprocessors are poorly suited for solvinglarge systems of linear equations. Conventional few-core microprocessorshave a limited ability to perform many calculations simultaneously or inother words have little parallelism. Therefore, while each individualproblem or floating-point operation may be able to be performed quicklyby a conventional few-core microprocessor, the system requiressubstantial time to solve the entire system of linear equations.

However, single-instruction multiple-data (SIMD) processors are able toperform the same operation on multiple pieces of data at the same time.Graphics Processing Units (GPUs) can perform these operations in supportof graphics rendering, and also for general-purpose scientificcomputing.

Another way to perform computations faster is to have substantially moreprocessor cores. For example, supercomputers can split up a problem intosmaller chunks that are processed in parallel across its differentnodes.

Many equations are much more natural to perform in an analogenvironment. Equations that would require many discrete calculations tobe performed in a digital environment could be processed more quickly byusing analog elements instead. A downside to analog processing is thatthe results are imprecise due to natural variations in the circuitelements and noise. However, if the error in the analog processing isacceptable, or the result can then be fed into a digital solver, therecan be time and energy savings.

One task for which scientific computing is used is real worldsimulations. For example, the uses include weather forecasting anddetailed physics modeling. Another example is the determination ofanalog behavior of electric circuits. The base algorithms for many ofthese models involve solving large linear systems.

Aspects of the present disclosure provide a general-purpose analogaccelerator for solving linear systems. Aspects of the analogaccelerator are able to sit on and operably communicate, interact with,and function with an existing data bus in a general computing system.

Aspects of the present disclosure are able to operably integrate withexisting digital iterative solvers running on existing general-purposedigital compute logic, which include for example CPUs, general-purposegraphics processing units (GP-GPUs), and the like. The result or resultsfrom a solver or analog accelerator is intended in aspects to be used asa “seed” or initial guess in iterative solvers which will likely reducethe number of needed iterations to find a solution. The analogaccelerator may also be used to speed up processing of existingiterations.

Reference is now made to FIG. 6, which presents a cross-point arraysuitable for practicing aspects of this disclosure. Shown in FIG. 6 isan analog accelerator or an accelerator 602, which includes aprogrammable resistive crosspoint array 604 and a CPU/Digital IterativeSolver 606. A CPU 606 includes any electronic circuitry within acomputer that carries out instructions of a computer program. CPU 606may also include a processor 614 (not shown), a memory 616 (not shown)storing computer program instructions 618 (not shown). As depicted,array 604 includes four analog-to-digital converters (ADCs) 608, fourdigital-to-analog converters (DACs) 610, and numerous resistors 612. Itshould be appreciated that while accelerator 602 includes four ADCs 608,four DACs 610, and sixteen (16) resistors 612, aspects of accelerator602 include more or less ADCs 608, DACs 610, and resistors 612 thandepicted in FIG. 6 provided it is operable as described herein.

Aspects of array 604 also include one or more drivers for operatingarray 604, one or more sensors for sensing current and/or voltage withinarray 604, and/or one or more control logic for operating array 604. ADC608 includes any device that operably converts a continuous physicalquantity, such as voltage to a digital number that represents thequantity's amplitude. DAC 610 includes any device that operably convertsdigital data, such as binary into an analog signal. An analog signalincludes current, voltage, or electric charge. A resistor 612 includesany type of passive two-terminal electrical component that implementselectrical resistance as a circuit element and is operable as describedherein. Aspects of the array 604 are configurable to operably interfacewith any type of computing system known in the art including CPUs,GP-GPUs, and the like. Aspects of this disclosure also include array 604interfacing with a dedicated driver circuitry. An exemplary dedicateddriver circuitry is a circuitry operable to perform iterations asdescribed herein in an autonomous manner without interaction with aprocessor or a digital iterative solver (except for its initial setup).Aspects of the interface between array 604 and CPU 606 can bememory-mapped with direct memory access (DMA) based transfers to andfrom the accelerator 602. For example, there can be a directbyte-for-byte correlation for the elements of matrix A between array 604and CPU 606. Aspects may also include a control interface (not shown)operably connected to CPU 606 and/or to start calculations, interruptcalculations, autonomous operations, such as performing iterativerefinement by accelerator 602, and/or to determine the status of thearray or the calculations it is performing.

Aspects of the accelerator 602 may have write speeds to the array, whichare slower than a rate at which data can be streamed or sent toaccelerator 602. For example, exemplary video cards compatible with thisdisclosure may support bandwidth of up to 512 GB/sec. Accordingly,accelerators 602 may buffer incoming data. This may be accomplishedthrough the use of back-pressure along a data bus to the DMA controller.Aspects of the accelerator 602, depending on constraints such as speed,power, chip area, and timing may require the need for multiple outputsto share the same ADC.

Aspects of the present disclosure utilize an analog solver oraccelerator 602 to solve mathematical equations, such as linear algebraequations using iterative methods to produce an answer that isapproximately exact. Answers are approximately exact because they mayinclude errors present in the analog components or the components in theaccelerator 602 itself. However, the approximate solution or result fromaccelerator 602 can be used as a guess to the existing digital iterativemethods, and thereby eliminate some of the iterations of the digitaliterative methods thereby reducing total calculation time and energy.

An iterative solver or CPU 606 would first load an exemplary accelerator602 with a matrix at line 601 being used such as the matrix A from theequation Ax=b. Loading accelerator 602 with matrix A can include settingresistances on resistors 612 of array 604 that correspond to the valuesof matrix A. In one aspect, the resistance values set on resistors 612or other resistive elements of accelerator 602 represent a transformedvalue of matrix A described by the equation R_(i,j)=B+S/A_(i,j), whereinR is the resistance of a resistor 612 at a location represented by i andj, A is the value of a particular element of the matrix, and B and S arebias and scaling factors respectively to bring the programmed valuesinto a range that can be utilized by accelerator 602. Next, the CPU 606would send the right-hand side of the equation to the accelerator 602.In this example, the CPU 606 would send the known b-vector to theaccelerator at line 603. The accelerator 602 would return a value x^(i)at line 605 that is close to the desired x^(i) wherein x is an unknownand i is the number of iterations. The CPU 606 would then use xi as aninitial guessed seed to solve the equation Ax=b. Typically, x^(i)≈x,allowing the iterative method of the CPU to complete in fewer iterationsthan would have otherwise been required without the accelerator 602.Depending on the characteristics of matrix A and the technology used toimplement the accelerator, the error in the result might even be smallenough to avoid requiring the CPU to perform any conventionaliterations.

In other aspects, accelerator 602 can be used for matrix-vectormultiplication. In this aspect, iterative solver or CPU 606 would firstload an accelerator 602 with a matrix at line 601 being used such as thematrix A from the equation Ax=b. Next, the CPU 606 would send the knownx-vector to the accelerator at line 607. The accelerator 602 wouldreturn a value b at line 609. CPU 606 would then use b in the process ofsolving the system of linear equations faster. An accelerator could alsobe built such that an iterative algorithm, such as Conjugate Gradient orIterative Refinement is carried out on the accelerator without needingCPU involvement except for initial programming and then returning theresult to the CPU. Generally, Iterative Refinement is an iterativemethod to improve the accuracy of numerical solutions to systems oflinear equations.

A crosspoint array 604 is initialized by providing the contents of amatrix such as matrix A from the equation Ax=b from the CPU 606. In someaspects, this will include the information from matrix A beingmemory-mapped to the accelerator. Upon the accelerator 602 receiving thedata of the matrix, the programming circuitry such as voltage sources610 and current sources 615 set the resistances of the crosspoint cells611 of array 604 based on the values in the matrix. As shown in FIG. 6,each crosspoint cell 611 includes a single resistor 612. However, itshould be appreciated that aspects of crosspoint cells 611 can includeone or more resistors 612 and/or one or more transistors (not shown).The resistances of the crosspoint cells 611 of array 604 can be set withappropriate current sources 615 and digital-to-analog converters (DACs)610 that act as voltage sources. Aspects of the present system providefor the crosspoint cells 611 of the accelerator 602 to be bothindividually programmed and/or collectively erased and/or collectivelyloaded with data. Collectively erasing or collectively loading the datafrom the matrix onto the crosspoint cells 611 of the accelerator 602 mayreduce programming time of the accelerator 602.

Once array 604 is programmed with the matrix A, an exemplary accelerator602 can be configured for either sparse matrix-vector-multiplication(SpMVM) by solving for the variable b in Ax=b or as an initial seedgenerator by solving for x in Ax=b. However, first the voltage sources610 or current sources 615 need to be programmed with the data for x orb depending on which configuration is being used. Similar with matrix A,the data for x or b may also be sent by a memory-mapped interface fromthe CPU 606 to the array 604.

As soon as the programming is completed, the accelerator's 602 resultwill be available to the ammeters 613 or ADCs 608. The DACs 610 willhave some timing constraints after which their data will be available bya memory-mapped interface. For instance, in one aspect, there will be animplementation-dependent time period after which the output of theaccelerator's 602 results will be stable or at a desired value that isno longer changing. As the results stabilize ammeters 613 and ADCs 608will be able to sense the voltages and currents in array 604. CPU 606will then capture the stabilized voltage and current values. Acontrol/status channel may be used by the driver to either poll forreadiness, or to receive an interrupt when the output data is ready tobe read.

The accelerator 602 may be implemented as an add-in card operablycoupled to an existing industry-standard memory-mapped bus, for examplePCI-Express. Accelerator 602 operably communicates with a carriercircuit board as it would include termination and interface components,along with power regulation for the accelerator 602 application specificintegrated circuit system-on chip (ASIC SoC). In some aspects, an ASICand power regulator can be included directly on an existing systemboard, which could avoid the use of a socketed card.

Aspects of accelerator 602 may be designed as a memory-mapped devicethat uses special function registers to specify the solving mode (SpMVMor solver) and determine status (ready to read out).

An ASIC can be designed based on a square crosspoint array ofprogrammable resistive elements as shown in FIG. 6 by array 604. Inanother aspect, an ASIC design can be based on a non-square arraywherein multiple cells with differing resistance ranges are usedtogether to generate a total derived resistance. In addition to thecircuitry to be able to independently program each crosspoint cell 611to a specified value, accelerator 602 also includes voltage sources 610and current sources 615 and meters ADC 608 and ammeters 613 on theperiphery of the array 604. Aspects of accelerator 602 include both onemeter (for example ammeter 613) for each row/column of array 604, andone meter (for example ammeter 613) for multiple rows/columns, which mayrequire in some embodiments a multiplexing scheme. Aspects of thepresent system also include additional bus interface circuitry betweenCPU 606 and accelerator 602 necessary to implement memory mapping, andcontrol and status registers.

To obtain the currents and voltages in a large resistive network, thenetwork can be converted, using Kirchhoff s laws, into a system oflinear equations. Given known resistor values and voltage or currentinputs, solving the system provides the remaining unknowns. The reverseis also true: given a system of linear equations, it is possible toimplement a resistor network that provides the solution to that linearsystem.

FIG. 7 presents a linear system solver based on a resistive cross-pointarray suitable for solving linear systems. FIG. 7 shows solving a linearsystem such as Ax=b through applying currents to a memristor crosspointarray and measuring voltages. Depicted in FIG. 7 is array 702, whichincludes multiple crosspoint cells 704 that include resistors 706.

According to Kirchhoff s current laws,

${{\sum\limits_{j = 1}^{n}\frac{V_{0} - V_{j}}{R_{ij}}} = I_{i}},{i = {1\mspace{14mu} \ldots \mspace{14mu} n}},$

which can be mapped to solve the linear system Ax=b because. The inputcurrents I₁, I₂, . . . , I_(n) on the vertical wires 708 represent thevector b from the equation Ax=b. The conductances or resistors 706 atthe crosspoint nodes 1/R₁₁, 1/R₁₂, . . . , 1/R_(nn) corresponds to thevalues in a n×n matrix A; and voltages V₀, V₁, V₂, . . . , V_(n) aremeasured to resolve the vector x, since V₀-V_(i) represents x,.

Aspects of array 702 and accelerator 602 can include a delta sigma (ΔΣ)ADC. A ΔΣ provides a mechanism to sense and digitize an analog signal atnodes of array 702 and accelerator 602. Aspects of ΔΣ ADC include a ΔΣmodulator followed by a digital/decimator filter. A ΔΣ modulator isoperable to quantize an analog input signal and reduce noise at lowerfrequencies. Aspects of ΔΣ ADC operably implement a function callednoise shaping that pushes low-frequency noise up to higher frequencieswhere it is outside the band of interest.

In certain aspects, noise in a modulator can be moved to higherfrequencies. Increasing the order of the modulator reduces themodulator's in-band quantization noise. Sharing a sensor over multiplerows of array 702 or accelerator 602 overcomes the problem of area andpower overhead with having one sensor per row because less power isrequired to power a fewer number of sensors. However, a reduced outputdata rate (f_(D)) can be increased by increasing the decimation ratio(DR). Although increasing the DR pushes the f_(D) toward the higherfrequencies, the effective number of bits (ENOB) is reduced since thenoise is stronger at higher frequencies (due to noise shaping). The DRcan be increased by increasing the master clock rate, which keeps theENOB high, but this too increases the power consumption for the array702 or accelerator 602. Thus, certain aspects include a tradeoff betweenthe order of the modulator, the number of the active sensors over thearray (for example array 702 or accelerator 602) at each senseoperation, and the output data rate.

Aspects of the present system provide that the values of FIG. 7 can bemapped linear equations, for example to the equation Ax=b. For instance,the resistances (R₁₁, R₂₁, R₁₂, R₂₂, etc.) of resistors 706, the voltagevalues (V₁, V₂, . . . V_(n)) of the rows 710, and the current values(I₁, I₂, . . . I_(n)) of columns 708 can be mapped to the equation Ax−bas follows:

${\begin{bmatrix}{1/R_{11}} & {1/R_{21}} \\{1/R_{12}} & {1/R_{22}}\end{bmatrix}\begin{bmatrix}V_{1} \\V_{2}\end{bmatrix}} = \begin{bmatrix}I_{1} \\I_{2}\end{bmatrix}$

However, it is understood that aspects of the present system provide forthe representation of numerous different configurations of linearequations, which can be mapped to a resistive array, such as array 702or accelerator 602 by the values of resistance, voltage, and current.

Resistive arrays such as array 702 or accelerator 602 may find itdifficult to represent negative coefficients of matrix A in theirresistive networks because it requires the use of negative resistance.One solution is to expand a given linear system to include auxiliaryvariables and equations. The auxiliary variables and equations are ableto transform A into a matrix composed of only positive coefficients. Forinstance, if one of the equations in a given linear system is2x₁−x₂−7x₃=0, wherein x is an unknown variable, the negative x variablescan be expressed in terms of positive z variables, where

-   -   z₁=−x₁    -   z₂=−x₂    -   z₃=−x₃

This transformation adds three (3) new variables to the linear systemand the sample equation becomes 2x₁+0x₂+0x₃+0z₁+1z₂+7z₃=0. Since thesystem now includes three (3) additional variables, solving it requiresthree (3) additional equations. The definitions for the z variablesprovide these additional equations. These definitions can be written as(1) z₁+x₁=0, (2) z₂+x₂=0, and (3) z₃+x₃=0.

The three (3) additional variables and the three (3) additionalequations expand the original coefficient matrix from a size of 3×3 to asize of 6×6, or more generally, from n×n to 2n×2n. The expanded matrixcan now be represented in the resistive network because it no longercontains any negative values.

A system of linear equations in complex-space may arise in manyapplications. However, the resistance of a resistor has values from thereal space and not complex-space.

Therefore, to solve a system of linear equations in complex space withan exemplary accelerator the inconsistency needs to be reconciled.Aspects of the present system provide for every system of linearequations in complex-space an equivalent system of linear equations inreal-space. For example, Ax=b may be a system of linear equations incomplex space, where A=[A₁, . . . , A_(i), . . . A_(N)]^(T) is thecoefficients matrix, and x=[x₁, . . . , x_(i), . . . , x^(N)]^(T) is theunknown vector. From this equation

A_(i)x=b_(i)

Expanding the equation leads to

[a _(i,1) ^(r) +ja _(i,1) ^(i) , . . . , a _(i,j) ^(r) +ja _(i,j) ^(i) ,a _(i,N) ^(r) +ja _(i,N) ^(i) ]×[x ₁ ^(r) +jx ₁ ^(i) , . . . , x _(j)^(r) +jx _(j) ^(i) , . . . , x _(N) ^(r) +jx _(N) ^(i)]^(T) =b _(i) ^(r)+jb _(i) ^(i).

Where superscript r and i stand for real and imaginary parts,respectively. From this expansion, it can be concluded that

${{{\sum\limits_{j = 1}^{N}{a_{i,j}^{r}x_{j}^{r}}} - {a_{i,j}^{i}x_{j}^{i}}} = b_{i}^{r}},{{{\sum\limits_{j = 1}^{N}{a_{i,j}^{r}x_{j}^{i}}} + {a_{i,j}^{i}x_{j}^{r}}} = {b_{i}^{i}.}}$

Rewriting these equations in the matrix form, provided is

[a _(i1) ^(r) . . . a _(iN) ^(r) −a _(i1) ^(i) . . . −a _(iN) ^(i) ]×[x₁ ^(r) . . . x _(N) ^(r) x ₁ ^(i) . . . x _(N) ^(i)]^(T) =b _(i) ^(r)

[−a _(i1) ^(i) . . . −a _(iN) ^(i) a _(i1) ^(r) . . . a _(iN) ^(r) ]×[x₁ ^(r) . . . x _(N) ^(r) x ₁ ^(i) . . . x _(N) ^(i)]^(T) =b _(i) ^(i).

Combining these two equations, the following equivalent system of linearequations in the real-space is determined,

${\begin{bmatrix}A^{r} & {- A^{i}} \\A^{i} & A^{r}\end{bmatrix}\begin{bmatrix}x^{r} \\x^{i}\end{bmatrix}} = {\begin{bmatrix}b^{r} \\b^{i}\end{bmatrix}.}$

The general system diagram of FIG. 6 includes separate lines forresolved and known values of the x and b vectors. This is because inaddition to using the array 604 as an initial guess generator, aspectsof array 604 can also serve as a matrix-vector multiplier. If theb-vector currents are treated as outputs instead of inputs and thex-vector voltages are treated as inputs instead of outputs, the array604 will generate the product vector of matrix A and vector x in theform of currents. Using the resistive network as a matrix-vectormultiplier can thus potentially speed up the computation of points x_(i)defined by the iterative equations of various methods. These iterativeequations depend on constantly recalculating matrix-vector products,which the resistive array 604 can accomplish almost instantly. Theseproducts could be supplied to the digital solver or CPU 606,accelerating the final computation of the solution x. In another aspect,the use of the digital solver or CPU 606 is avoided altogether. Array604 is used to generate an initial guess in the first phase of thecomputation. For the second phase of the computation, array 604 is usedas a matrix-vector multiplier and iterative methods run on it until adesired accuracy of the solution is achieved. Iterative methods such asiterative refinement could even be used, switching the usage of thearray between a solver and a matrix-vector multiplier.

Aspects of the disclosed resistive network are able to accommodatecoefficient matrices of various sizes. However, most matrices from realapplications are so large that they cannot fit into a single resistivearray. These matrices have to be spread across multiple small arrays.For example, common problem sets involve square matrices that range froma dimension of n=5 to n=118142155. The latter matrix dimension wouldrequire a single cross-point array containing almost 14 quadrillionmemristors, which is not feasible. Increasing the array size typicallyincreases the amount of sneak current in the wordlines and bitlines.Sneak current makes it difficult to sense the contents of a memristorduring a read. Also, the wordlines and bitlines are not ideal, whichmeans they may have some intrinsic resistance which can affect thememristor readings. Generally, for exemplary arrays 704, the longer theline, the higher the resistance. This resistance can cause unwantedvoltage drops in an array, which forces the driving voltage for a writeto go up in order to compensate. However, the driving voltage has astrict upper limit because at some threshold it will become so high thatit will modify some cell contents unintentionally. A high drivingvoltage and current also implies larger peripheral circuitry. Increasingthe nonlinearity coefficient of a memristor alleviates some of theseconstraints, but only to a certain extent. Utilizing the availablenon-linearity, the size of a memristor array should not exceed 1024 by1024. Otherwise, reliability cannot be guaranteed. However, aspects ofthis disclosure include memristor arrays that are much smaller than 1024by 1024 and memristor arrays that are much larger than 1024 by 1024.

Referring now to FIG. 8, presented is a logic flow diagram in accordancewith a method and apparatus for performing aspects of the presentsystem. Block 802 presents (a) receiving, by a resistive memory array, afirst data, the resistive memory array comprising a plurality ofcrosspoint cells, wherein the receiving comprises setting a plurality ofresistances on the plurality of crosspoint cells, wherein each of theplurality of resistances are based on the first data; (b) receiving, bythe resistive memory array, a second data, wherein the receivingcomprises applying at least one of a current and a voltage on theplurality of crosspoint cells; and (c) determining, by the resistivememory array, an initial unknown value, the initial value based on thefirst data and the second data. Then block 804 specifies wherein thefirst data comprises a coefficient matrix of a system of linearequations.

Some of the no-limiting implementations detailed above are alsosummarized at FIG. 8 following block 804. Block 806 specifies whereinthe second data is based on a known b-vector or a known x-vector of thelinear equation. Then block 808 relates to wherein the initial unknownvalue comprises an approximate solution to the linear equation. Block810 specifies further comprising setting a plurality of resistances onthe plurality of cells, wherein each of the plurality of resistances arebased on the determined initial unknown value, applying at least one ofa current and a voltage on the plurality of cells based on the seconddata, and determining second initial unknown value based on thedetermined initial unknown value and the second data. Then at block 812it states wherein the determined second initial unknown value is acloser approximate solution to the system of linear equations than theinitial unknown value.

The logic diagram of FIG. 8 may be considered to illustrate theoperation of a method, a result of execution of computer programinstructions stored in a computer-readable medium. The logic diagram ofFIG. 8 may also be considered a specific manner in which components of adevice are configured to cause that device to operate, whether such adevice is a computer, laptop, supercomputer, resistive memory array, orone or more components thereof. The various blocks shown in FIG. 8 mayalso be considered as a plurality of coupled logic circuit elementsconstructed to carry out the associated function(s), or specific resultof strings of computer program instructions or code stored in memory, orresistance stored in a resistive memory array.

Various aspects of the computer-readable medium include any data storagetechnology type which is suitable to the local technical environment,including but not limited to semiconductor based memory devices,magnetic memory devices and systems, optical memory devices and systems,fixed memory, removable memory, disc memory, flash memory, dynamicrandom-access memory (DRAM), static random-access memory (SRAM),electronically erasable programmable read-only memory (EEPROM),resistive memory, and the like. Various aspects of the processor includebut are not limited to general purpose computers, special purposecomputers, microprocessors, digital signal processors, and multi-coreprocessors.

It will be appreciated that variants of the above-disclosed and otherfeatures and functions, or alternatives thereof, may be combined intomany other different systems or applications. Various presentlyunforeseen or unanticipated alternatives, modifications, variations, orimprovements therein may be subsequently made by those skilled in theart, which are also intended to be encompassed by the following claims.CLAIMS

1. A method comprising: (a) receiving, by a resistive memory array, afirst data, the resistive memory array comprising a plurality of cells,wherein the receiving comprises setting a plurality of resistances onthe plurality of cells, wherein each of the plurality of resistances arebased on the first data; (b) receiving, by the resistive memory array, asecond data, wherein the receiving comprises applying at least one of acurrent and a voltage based on the second data on the plurality ofcells; and (c) determining, by the resistive memory array, an initialunknown value, the initial value based on the first data and the seconddata.
 2. The method according to claim 1, wherein the first datacomprises a coefficient matrix of a system of linear equations.
 3. Themethod according to claim 2, wherein the second data is based on a knownb-vector or a known x-vector of the system of linear equations.
 4. Themethod according to claim 3, wherein the initial unknown value comprisesan approximate solution to the system of linear equations.
 5. The methodaccording to claim 1, the method further comprising setting a pluralityof resistances on the plurality of cells, wherein each of the pluralityof resistances are based on the determined initial unknown value,applying at least one of a current and a voltage on the plurality ofcells based on the second data, and determining a second initial unknownvalue based on the determined initial unknown value and the second data.6. The method according to claim 5, wherein the determined secondinitial unknown value is a closer approximate solution to the system oflinear equations than the initial unknown value.
 7. An apparatus forsolving, the apparatus comprising: (a) at least one processor; (b) atleast one memory operably connected to the at least one processor; (c)at least one resistive memory array, the resistive memory arraycomprising a plurality of crosspoint cells, the at least one resistivememory array programmable with at least a first data and a second data,wherein the programmable at least one resistive memory comprises settinga plurality of resistances on the plurality of crosspoint cells based onthe first data and applying least one of a current and a voltage basedon the second data; and (d) at least one sensor, the at least one sensorbeing operatively coupled to the at least one resistive memory arrayable to sense at least one of a voltage and a current on the pluralityof crosspoint cells.
 8. The apparatus according to claim 7, wherein theat least one resistive memory array is able to determine an unknownvalue based on the first data and the second data.
 9. The apparatusaccording to claim 8, wherein the first data comprises a coefficientmatrix of a system of linear equations.
 10. The apparatus according toclaim 9, wherein the second data comprises a known b-vector or a knownx-vector of the system of linear equations.
 11. The apparatus accordingto claim 10, wherein the initial unknown value comprises a possiblesolution to the system of linear equations.
 12. An apparatus forsolving, the apparatus comprising: at least one processor; at least onememory including operably connected to the at least one processor; atleast one resistive memory array, the resistive memory array comprisinga plurality of crosspoint cells, wherein the at least one processor, theat least one memory including computer program instructions, and the atleast one resistive memory array are configured to cause the apparatusto at least: set a first data on the at least one resistive memoryarray, wherein the setting comprises setting a plurality of resistanceson the plurality of crosspoint cells, wherein each of the plurality ofresistances are based on the first data; set a second data on the atleast one resistive memory array, wherein the setting comprises applyingat least one of a current and a voltage on the plurality of crosspointcells; and determine an initial unknown value, the initial value basedon the first data and the second data.
 13. The apparatus according toclaim 10, wherein the first data comprises a coefficient matrix of asystem of linear equations.
 14. The apparatus according to claim 11,wherein the second data comprises a known b-vector or a known x-vectorof the system of linear equations.
 15. The apparatus according to claim12, wherein the initial unknown value comprises an approximate solutionto the system of linear equations.
 16. The apparatus according to claim12, the at least one processor, the at least one memory includingcomputer program instructions, and the at least one resistive memoryarray are configured to further cause the apparatus to at least set aplurality of resistances on the plurality of cells, wherein each of theplurality of resistances are based on the determined initial unknownvalue, apply at least one of a current and a voltage on the plurality ofcells based on the second data, and determine second initial unknownvalue based on the determined initial unknown value and the second data.17. The apparatus according to claim 16, wherein the determined secondinitial unknown value is a closer approximate solution to the system oflinear equations than the initial unknown value.